Please use this identifier to cite or link to this item:
http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606
Title: | Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method |
Authors: | Aditya, Amit Kumar |
Keywords: | DEVAM Gummel Decoupled Approach Coupled Approach Finite Element Method Device Modelling |
Issue Date: | Mar-1999 |
Publisher: | IIT Kharagpur |
Gov't Doc #: | NB12474 |
URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606 |
Appears in Collections: | Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method |
Files in This Item:
File | Description | Size | Format | |
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NB12474_Abstract.pdf | 1.68 MB | Adobe PDF | View/Open | |
NB12474_Thesis.pdf Restricted Access | 5.38 MB | Adobe PDF | View/Open Request a copy |
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