Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606
Title: Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method
Authors: Aditya, Amit Kumar
Keywords: DEVAM
Gummel Decoupled Approach
Coupled Approach
Finite Element Method
Device Modelling
Issue Date: Mar-1999
Publisher: IIT Kharagpur
Gov't Doc #: NB12474
URI: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606
Appears in Collections:Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method

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