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  4. Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method
Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606
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dc.contributor.authorAditya, Amit Kumar-
dc.date.accessioned2024-04-25T11:49:45Z-
dc.date.available2024-04-25T11:49:45Z-
dc.date.issued1999-03-
dc.identifier.govdocNB12474-
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606-
dc.language.isoenen_US
dc.publisherIIT Kharagpuren_US
dc.subjectDEVAMen_US
dc.subjectGummel Decoupled Approachen_US
dc.subjectCoupled Approachen_US
dc.subjectFinite Element Methoden_US
dc.subjectDevice Modellingen_US
dc.titleModelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Methoden_US
dc.typeThesisen_US
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