IDR - IIT Kharagpur
Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method
Login
IDR Home
→
2. Ph.D Theses of IIT Kharagpur
→
Electronics & Electrical Communication Engineering
→
Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method
→
View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method
Aditya, Amit Kumar
URI:
http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606
Date:
1999-03
Show full item record
Files in this item
Name:
NB12474_Abstract.pdf
Size:
1.640Mb
Format:
PDF
View/
Open
Name:
NB12474_Thesis.pdf
Size:
5.249Mb
Format:
PDF
View/
Open
This item appears in the following Collection(s)
Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method
Search DSpace
Search DSpace
This Collection
Advanced Search
Browse
All of DSpace
Communities & Collections
By Issue Date
Authors
Titles
Subjects
This Collection
By Issue Date
Authors
Titles
Subjects
My Account
Login
