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Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method Collection home page

Author: Amit Kumar Aditya
Supervisor: Dr. Swapna Banerjee
Department of Electronics and Electrical Communication Engineering
Indian Institute of Technology Kharagpur, India
March, 1999

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Collection's Items (Sorted by Submit Date in Descending order): 1 to 1 of 1
Issue DateTitleAuthor(s)
1999-03Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element MethodAditya, Amit Kumar
Collection's Items (Sorted by Submit Date in Descending order): 1 to 1 of 1

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