Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method

dc.contributor.author	Aditya, Amit Kumar
dc.date.accessioned	2024-04-25T11:49:45Z
dc.date.available	2024-04-25T11:49:45Z
dc.date.issued	1999-03
dc.identifier.govdoc	NB12474
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/13606
dc.language.iso	en	en_US
dc.publisher	IIT Kharagpur	en_US
dc.subject	DEVAM	en_US
dc.subject	Gummel Decoupled Approach	en_US
dc.subject	Coupled Approach	en_US
dc.subject	Finite Element Method	en_US
dc.subject	Device Modelling	en_US
dc.title	Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method	en_US
dc.type	Thesis	en_US