IDR - IIT Kharagpur

Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method

Modelling and Simulation of Si/SiGe Bipolar/Mos Devices Using Finite Element Method

 

Author: Amit Kumar Aditya
Supervisor: Dr. Swapna Banerjee
Department of Electronics and Electrical Communication Engineering
Indian Institute of Technology Kharagpur, India
March, 1999

Recent Submissions