Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7444
Title: Growth and Characterization of Epitaxial AlGaN/GaN and InGaN/GaN Heterostructures on Si (111) by PAMBE for Organic Vapor Sensing Applications
Authors: Das, Subhashis
Keywords: Crystalline Structure
III-Nitrides
X-ray Diffraction
PAMBE
AlGaN/GaN
Issue Date: 1-Nov-2016
Publisher: IIT, Kharagpur
Gov't Doc #: NB15645
URI: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7444
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