Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7444
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDas, Subhashis-
dc.date.accessioned2017-03-10T07:04:42Z-
dc.date.available2017-03-10T07:04:42Z-
dc.date.issued2016-11-01-
dc.identifier.govdocNB15645-
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7444-
dc.language.isoenen
dc.publisherIIT, Kharagpuren
dc.subjectCrystalline Structureen
dc.subjectIII-Nitridesen
dc.subjectX-ray Diffractionen
dc.subjectPAMBEen
dc.subjectAlGaN/GaNen
dc.titleGrowth and Characterization of Epitaxial AlGaN/GaN and InGaN/GaN Heterostructures on Si (111) by PAMBE for Organic Vapor Sensing Applicationsen
dc.typeThesisen
Appears in Collections:Growth and Characterization of Epitaxial AlGaN/GaN and InGaN/GaN Heterostructures on Si (111)...

Files in This Item:
File Description SizeFormat 
NB15645_Abstract.pdf100.78 kBAdobe PDFThumbnail
View/Open
NB15645_Thesis.pdf
  Restricted Access
13.13 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.