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http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119| Title: | Trapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructures |
| Authors: | Chakraborty, Apurba |
| Keywords: | Diode Reverse Leakage Electron Gas Heterostructure Semiconductor |
| Issue Date: | 1-Aug-2016 |
| Publisher: | IIT , Kharagpur |
| Gov't Doc #: | NB15592 |
| URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119 |
| Appears in Collections: | Trapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructures |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NB15592_Abstract.pdf | 87.14 kB | Adobe PDF |  View/Open | |
| NB15592_Review of Examiner 1.pdf | 160.91 kB | Adobe PDF |  View/Open | |
| NB15592_Review of Examiner 2.pdf | 260.31 kB | Adobe PDF |  View/Open | |
| NB15592_Thesis.pdf Restricted Access | 5.62 MB | Adobe PDF | View/Open Request a copy |
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