Please use this identifier to cite or link to this item:
http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chakraborty, Apurba | - |
dc.date.accessioned | 2016-10-05T10:54:13Z | - |
dc.date.available | 2016-10-05T10:54:13Z | - |
dc.date.issued | 2016-08-01 | - |
dc.identifier.govdoc | NB15592 | - |
dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119 | - |
dc.language.iso | en | en |
dc.publisher | IIT , Kharagpur | en |
dc.subject | Diode | en |
dc.subject | Reverse Leakage | en |
dc.subject | Electron Gas | en |
dc.subject | Heterostructure | en |
dc.subject | Semiconductor | en |
dc.title | Trapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructures | en |
dc.type | Thesis | en |
Appears in Collections: | Trapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructures |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
NB15592_Abstract.pdf | 87.14 kB | Adobe PDF | ![]() View/Open | |
NB15592_Review of Examiner 1.pdf | 160.91 kB | Adobe PDF | ![]() View/Open | |
NB15592_Review of Examiner 2.pdf | 260.31 kB | Adobe PDF | ![]() View/Open | |
NB15592_Thesis.pdf Restricted Access | 5.62 MB | Adobe PDF | View/Open Request a copy |
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