Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119
Full metadata record
DC FieldValueLanguage
dc.contributor.authorChakraborty, Apurba-
dc.date.accessioned2016-10-05T10:54:13Z-
dc.date.available2016-10-05T10:54:13Z-
dc.date.issued2016-08-01-
dc.identifier.govdocNB15592-
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119-
dc.language.isoenen
dc.publisherIIT , Kharagpuren
dc.subjectDiodeen
dc.subjectReverse Leakageen
dc.subjectElectron Gasen
dc.subjectHeterostructureen
dc.subjectSemiconductoren
dc.titleTrapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructuresen
dc.typeThesisen
Appears in Collections:Trapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructures

Files in This Item:
File Description SizeFormat 
NB15592_Abstract.pdf87.14 kBAdobe PDFThumbnail
View/Open
NB15592_Review of Examiner 1.pdf160.91 kBAdobe PDFThumbnail
View/Open
NB15592_Review of Examiner 2.pdf260.31 kBAdobe PDFThumbnail
View/Open
NB15592_Thesis.pdf
  Restricted Access
5.62 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.