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http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/3958| Title: | Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO |
| Authors: | Biswas, Pranab |
| Keywords: | DFT Hopping Charge Compensation Thermal Diffusion |
| Issue Date: | 29-Jun-2015 |
| Gov't Doc #: | NB15066 |
| URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/3958 |
| Appears in Collections: | Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NB15066_Thesis.pdf Restricted Access | 4.36 MB | Adobe PDF | View/Open Request a copy | |
| NB15066A_bstract.pdf | 58.85 kB | Adobe PDF |  View/Open |
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