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http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/3958Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Biswas, Pranab | - |
| dc.date.accessioned | 2015-06-29T10:58:37Z | - |
| dc.date.available | 2015-06-29T10:58:37Z | - |
| dc.date.issued | 2015-06-29T10:58:37Z | - |
| dc.identifier.govdoc | NB15066 | - |
| dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/3958 | - |
| dc.language.iso | en | en |
| dc.subject | DFT | en |
| dc.subject | Hopping | en |
| dc.subject | Charge Compensation | en |
| dc.subject | Thermal Diffusion | en |
| dc.title | Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO | en |
| dc.type | Thesis | en |
| Appears in Collections: | Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NB15066_Thesis.pdf Restricted Access | 4.36 MB | Adobe PDF | View/Open Request a copy | |
| NB15066A_bstract.pdf | 58.85 kB | Adobe PDF |  View/Open |
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