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http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2229| Title: | Low Frequency Noise Characterization and Modeling of Strain-Engineered Mosfets |
| Authors: | Mukherjee, Chhandak |
| Keywords: | Valence Band Strain-induced Mobility Tri-gate Substrate-induced Piezoresistive Power spectrum Probability distribution Carrier Mobility Gate Voltage Scaling Electronic Circuits Reliability Stress-Strain Silicon Conduction |
| Issue Date: | Mar-2013 |
| Publisher: | IIT Kharagpur |
| Gov't Doc #: | NB14844 |
| URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2229 |
| Appears in Collections: | Low Frequency Noise Characterization and Modeling of Strain-Engineered Mosfets |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NB14844_Abstract.pdf | 11.43 kB | Adobe PDF |  View/Open | |
| NB14844_Thesis.pdf Restricted Access | 3.92 MB | Adobe PDF | View/Open Request a copy |
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