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  4. Low Frequency Noise Characterization and Modeling of Strain-Engineered Mosfets
Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2229
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dc.contributor.authorMukherjee, Chhandak
dc.date.accessioned2014-08-22T11:13:43Z
dc.date.available2014-08-22T11:13:43Z
dc.date.issued2013-03
dc.identifier.govdocNB14844
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2229
dc.language.isoenen
dc.publisherIIT Kharagpuren
dc.subjectValence Banden
dc.subjectStrain-induced Mobilityen
dc.subjectTri-gateen
dc.subjectSubstrate-induceden
dc.subjectPiezoresistiveen
dc.subjectPower spectrumen
dc.subjectProbability distributionen
dc.subjectCarrier Mobilityen
dc.subjectGate Voltageen
dc.subjectScalingen
dc.subjectElectronic Circuitsen
dc.subjectReliabilityen
dc.subjectStress-Strainen
dc.subjectSiliconen
dc.subjectConductionen
dc.titleLow Frequency Noise Characterization and Modeling of Strain-Engineered Mosfetsen
dc.typeThesisen
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