Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/11472
Title: Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects
Authors: Bose, Ria
Keywords: MOSFET
Triple gate MOSFET
FET devices
Short channel effects
Multigate metal oxide
Issue Date: May-2021
Publisher: IIT Kharagpur
Gov't Doc #: NB17021
URI: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/11472
Appears in Collections:Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects

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