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http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/11472
Title: | Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects |
Authors: | Bose, Ria |
Keywords: | MOSFET Triple gate MOSFET FET devices Short channel effects Multigate metal oxide |
Issue Date: | May-2021 |
Publisher: | IIT Kharagpur |
Gov't Doc #: | NB17021 |
URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/11472 |
Appears in Collections: | Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects |
Files in This Item:
File | Description | Size | Format | |
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NB17021_Abstract.pdf | 62.77 kB | Adobe PDF | View/Open | |
NB17021_Thesis.pdf Restricted Access | 24.22 MB | Adobe PDF | View/Open Request a copy |
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