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Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects Collection home page

Author: Ria Bose
Supervisor: Prof. J N Roy
Advanced Technology Development Centre
Indian Institute of Technology Kharagpur, India
May, 2021

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Collection's Items (Sorted by Submit Date in Descending order): 1 to 1 of 1
Issue DateTitleAuthor(s)
2021-05Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel EffectsBose, Ria
Collection's Items (Sorted by Submit Date in Descending order): 1 to 1 of 1

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