Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors

dc.contributor.author	Ghosh, Saptarsi
dc.date.accessioned	2017-07-31T04:34:17Z
dc.date.available	2017-07-31T04:34:17Z
dc.date.issued	2017-04-01
dc.identifier.govdoc	NB15734
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/8013
dc.language.iso	en	en
dc.publisher	IIT, Kharagpur	en
dc.subject	Oxide-Semiconductor Interface	en
dc.subject	Polymorphism	en
dc.subject	Metal-Insulator-Semiconductor	en
dc.subject	Transistors	en
dc.subject	High Electron Mobility	en
dc.subject	AlGaN/GaN	en
dc.subject	Optimum Operation	en
dc.subject	Structural Design	en
dc.subject	Epitaxial Parameters	en
dc.title	Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors	en
dc.type	Thesis	en