IDR - IIT Kharagpur

Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors

Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors

 

Author: Saptarsi Ghosh
Guide: Prof. Dhrubes Biswas
Advanced Technology Development Centre
Indian Institute of Technology Kharagpur
April, 2017

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