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<title>Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/8012" rel="alternate"/>
<subtitle/>
<id>http://127.0.0.1/xmlui/handle/123456789/8012</id>
<updated>2026-04-17T12:57:13Z</updated>
<dc:date>2026-04-17T12:57:13Z</dc:date>
<entry>
<title>Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/8013" rel="alternate"/>
<author>
<name>Ghosh, Saptarsi</name>
</author>
<id>http://127.0.0.1/xmlui/handle/123456789/8013</id>
<updated>2017-07-31T04:34:17Z</updated>
<published>2017-04-01T00:00:00Z</published>
<summary type="text">Impact of Epitaxial Parameters on Structural Design and Optimum Operation of AlGaN/GaN High Electron Mobility Transistors
Ghosh, Saptarsi
</summary>
<dc:date>2017-04-01T00:00:00Z</dc:date>
</entry>
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