TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch Application

dc.contributor.author	Majumdar, Shubhankar
dc.date.accessioned	2017-03-10T06:42:16Z
dc.date.available	2017-03-10T06:42:16Z
dc.date.issued	2016-11-01
dc.identifier.govdoc	NB15644
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7441
dc.language.iso	en	en
dc.publisher	IIT, Kharagpur	en
dc.subject	Parameter Extraction	en
dc.subject	VerilogA Model	en
dc.subject	HEMT	en
dc.subject	Ga and N Polar	en
dc.subject	GaN	en
dc.title	TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch Application	en
dc.type	Thesis	en