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TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch Application

TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch Application

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Author: Shubhankar Majumdar
Guide: Prof. Dhrubes Biswas
Department of Advanced Technology Development Centrer
Indian Institute of Technology Kharagpur
November, 2016