IDR - IIT Kharagpur
Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects
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| dc.contributor.author | Bose, Ria | |
| dc.date.accessioned | 2022-07-26T05:21:33Z | |
| dc.date.available | 2022-07-26T05:21:33Z | |
| dc.date.issued | 2021-05 | |
| dc.identifier.govdoc | NB17021 | |
| dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/11472 | |
| dc.language.iso | en | en_US |
| dc.publisher | IIT Kharagpur | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | Triple gate MOSFET | en_US |
| dc.subject | FET devices | en_US |
| dc.subject | Short channel effects | en_US |
| dc.subject | Multigate metal oxide | en_US |
| dc.title | Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects | en_US |
| dc.type | Thesis | en_US |
