Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects
Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects
JavaScript is disabled for your browser. Some features of this site may not work without it.
Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects