<?xml version="1.0" encoding="UTF-8"?><feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
<title>Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/11471" rel="alternate"/>
<subtitle/>
<id>http://127.0.0.1/xmlui/handle/123456789/11471</id>
<updated>2026-04-18T14:01:48Z</updated>
<dc:date>2026-04-18T14:01:48Z</dc:date>
<entry>
<title>Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/11472" rel="alternate"/>
<author>
<name>Bose, Ria</name>
</author>
<id>http://127.0.0.1/xmlui/handle/123456789/11472</id>
<updated>2022-07-26T05:22:18Z</updated>
<published>2021-05-01T00:00:00Z</published>
<summary type="text">Analytical Modeling of Electrostatics and Drive Current in Nanoscale Double Gate MOSFET, Triple Gate MOSFET and Tunnel FET Devices with Reduced Short Channel Effects
Bose, Ria
</summary>
<dc:date>2021-05-01T00:00:00Z</dc:date>
</entry>
</feed>
