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  4. Ultrathin Dielectrics on Sige/Sigec Layers for Heterostructure Mosfet Applications
Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/9304
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dc.contributor.authorMaikap, Siddheswar
dc.date.accessioned2018-07-18T12:05:23Z
dc.date.available2018-07-18T12:05:23Z
dc.date.issued2001-08-21
dc.identifier.govdocNB12824 ; NB12825
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/9304
dc.language.isoenen
dc.publisherIIT, Kharagpuren
dc.subjectUltrathin Dielectricsen
dc.subjectSige/Sigec Layersen
dc.subjectHeterostructure Mosfet Applicationsen
dc.subjectSiGe-Channel p-MOSFETsen
dc.subjectUltrathin Gate Oxidesen
dc.subjectAlloy Layersen
dc.subjectMOS Capacitor Fabricationen
dc.titleUltrathin Dielectrics on Sige/Sigec Layers for Heterostructure Mosfet Applicationsen
dc.typeThesisen
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