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  4. Compact Modeling of Si-Heterostructure Bipolar Transistors and Active Inductor Design for RF Applications
Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7562
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dc.contributor.authorChakravorty, Anjan-
dc.date.accessioned2017-05-08T07:12:07Z-
dc.date.available2017-05-08T07:12:07Z-
dc.date.issued2004-12-01-
dc.identifier.govdocNB13266-
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7562-
dc.language.isoenen
dc.publisherIIT, Kharagpuren
dc.subjectSiGe:C-HBTsen
dc.subjectRF Applicationsen
dc.subjectActive Inductor Designen
dc.subjectSi-Heterostructure Bipolar Transistorsen
dc.subjectSi-Heterostructureen
dc.subjectCompact Modelingen
dc.titleCompact Modeling of Si-Heterostructure Bipolar Transistors and Active Inductor Design for RF Applicationsen
dc.typeThesisen
Appears in Collections:Compact Modeling of Si-Heterostructure Bipolar Transistors and Active Inductor Design for RF Applications

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