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TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch Application Collection home page

Author: Shubhankar Majumdar
Guide: Prof. Dhrubes Biswas
Department of Advanced Technology Development Centrer
Indian Institute of Technology Kharagpur
November, 2016

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Collection's Items (Sorted by Submit Date in Descending order): 1 to 1 of 1
Issue DateTitleAuthor(s)
2016-11-01TCAD Based Simulation, Growth and Characterization of Nitride-Based HEMT on Silicon for RF Switch ApplicationMajumdar, Shubhankar
Collection's Items (Sorted by Submit Date in Descending order): 1 to 1 of 1

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