Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/6597
Title: MBE Growth and Characterization of in (Al,Ga) as Metamorphic Buffers by Different Growth Approaches on GaAs (001) Substrate
Authors: Kumar, Rahul
Keywords: Photoluminescence
Molecular Beam Epitaxy
Anisotropic Surface
Materials growth
Epitaxial tilt
Metamorphic buffer
Issue Date: Jul-2016
Publisher: IIT, Kharagpur
Gov't Doc #: NB15521
URI: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/6597
Appears in Collections:MBE Growth and Characterization of in (Al,Ga) as Metamorphic Buffers by Different Growth Approaches on GaAs (001) Substrate

Files in This Item:
File Description SizeFormat 
NB15521_Abstract.pdf41.17 kBAdobe PDFThumbnail
View/Open
NB15521_Thesis.pdf
  Restricted Access
7.42 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.