Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/6015
Title: LPE Growth & Characterization of Inp & In1-Xgaxas Using Rareearth Gettering with Device Applications of In1-Xgaxas
Authors: Kumar, Arvind
Keywords: Surface Recombination Velocity
Photodetector
Gettering
Ingaas
Epitaxy
Issue Date: 1992
Publisher: IIT, Kharagpur
Gov't Doc #: NB11640
URI: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/6015
Appears in Collections:LPE Growth & Characterization of Inp & In1-Xgaxas Using Rareearth Gettering with Device Applications of In1-Xgaxas

Files in This Item:
File Description SizeFormat 
NB11640_Thesis.pdf
  Restricted Access
4.48 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.