Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/585
Title: Structural, optical and electrical properties of nitrogen and lithium doped ZnO
Authors: Majumdar, Sayanee
Keywords: Zinc oxide
Issue Date: 2010
Publisher: IIT Kharagpur
Abstract: Zinc oxide (ZnO) is a wide band gap (Eg = 3.3 eV at 300 K) semiconductor with large exciton binding energy at room temperature (~ 60 meV). As-grown ZnO is always n-type though p-type doping is indispensable to fabricate opto-electronic devices. This thesis contains studies on p-type doping in ZnO by lithium (Li) and nitrogen (N). After chemical synthesis of doped and as-prepared ZnO, the films were deposited by pulsed laser deposition and characterized by structural, optical and electrical techniques. It was observed from the x-ray diffraction (XRD) and Raman spectroscopy that Li had substituted Zn in ZnO lattice. The change in a- and c-parameter with Li incorporation was found to be due to lattice strain. It was also observed from photoluminescence (PL) measurements that no deep level was formed prohibiting p-type conductivity.
Gov't Doc #: NB14196
URI: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/585
Appears in Collections:Structural, optical and electrical properties of nitrogen and lithium doped ZnO

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