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Title: | Structural, optical and electrical properties of nitrogen and lithium doped ZnO |
Authors: | Majumdar, Sayanee |
Keywords: | Zinc oxide |
Issue Date: | 2010 |
Publisher: | IIT Kharagpur |
Abstract: | Zinc oxide (ZnO) is a wide band gap (Eg = 3.3 eV at 300 K) semiconductor with large exciton binding energy at room temperature (~ 60 meV). As-grown ZnO is always n-type though p-type doping is indispensable to fabricate opto-electronic devices. This thesis contains studies on p-type doping in ZnO by lithium (Li) and nitrogen (N). After chemical synthesis of doped and as-prepared ZnO, the films were deposited by pulsed laser deposition and characterized by structural, optical and electrical techniques. It was observed from the x-ray diffraction (XRD) and Raman spectroscopy that Li had substituted Zn in ZnO lattice. The change in a- and c-parameter with Li incorporation was found to be due to lattice strain. It was also observed from photoluminescence (PL) measurements that no deep level was formed prohibiting p-type conductivity. |
Gov't Doc #: | NB14196 |
URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/585 |
Appears in Collections: | Structural, optical and electrical properties of nitrogen and lithium doped ZnO |
Files in This Item:
File | Description | Size | Format | |
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NB14196.pdf Restricted Access | PDF File | 4.41 MB | Adobe PDF | View/Open Request a copy |
NB14196_Abstract.pdf | PDF File | 197.95 kB | Adobe PDF | ![]() View/Open |
NB14196_Introduction.pdf | PDF File | 290.74 kB | Adobe PDF | ![]() View/Open |
NB14196_TOC.pdf | PDF File | 211.82 kB | Adobe PDF | ![]() View/Open |
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