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dc.contributor.authorChowdhury, Subhra-
dc.date.accessioned2015-11-19T10:13:10Z-
dc.date.available2015-11-19T10:13:10Z-
dc.date.issued2015-05-
dc.identifier.govdocNB15297-
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/5580-
dc.language.isoenen
dc.publisherIIT, Kharagpuren
dc.subjectQuantum Applicationsen
dc.subjectHeterostructuresen
dc.subjectBarrier AlGaN/GaNen
dc.subjectComparative Analysisen
dc.subjectCharacterizationen
dc.subjectEpitaxial Growthen
dc.titleEpitaxial Growth, Characterization and Comparative analysis of thin barrier AlGaN/GaN and InAlN/GaN based Heterostructures on Silicon for Quantum Applicationsen
dc.typeThesisen
Appears in Collections:Epitaxial Growth, Characterization and Comparative analysis of thin barrier AlGaN/GaN and InAlN/GaN based...

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