Analytical Models for Threshold and Punchthrough Voltages of Small-Geometry Mosfets with Implanted Channels in VLSI

Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2885

Full metadata record

DC Field	Value	Language
dc.contributor.author	DASGUPTA, AMITAVA
dc.date.accessioned	2014-09-25T11:50:36Z
dc.date.available	2014-09-25T11:50:36Z
dc.date.issued	1988-08
dc.identifier.govdoc	NB11487
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2885
dc.language.iso	en	en
dc.publisher	IIT Kharagpur	en
dc.subject	Short-channel	en
dc.subject	Circuits	en
dc.subject	Geometry	en
dc.subject	Threshold voltage	en
dc.subject	Drain bias	en
dc.subject	Voltage	en
dc.subject	Current models	en
dc.subject	Punchthrough voltage	en
dc.subject	Subthreshold current	en
dc.title	Analytical Models for Threshold and Punchthrough Voltages of Small-Geometry Mosfets with Implanted Channels in VLSI	en
dc.type	Thesis	en
Appears in Collections:	Analytical Models for Threshold and Punchthrough Voltages of Small-Geometry Mosfets with Implanted Channels in VLSI

Files in This Item:

File	Description	Size	Format
NB11487_Introduction.pdf		658.97 kB	Adobe PDF	View/Open
NB11487_Thesis.pdf Restricted Access		7.62 MB	Adobe PDF	View/Open Request a copy

DSpace JSPUI