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http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2696| Title: | LPE Growth and Characterisation Of Heavily Doped N-InP |
| Authors: | BENDAPUDI, SEISHU |
| Keywords: | Welker Optical absorption Oswald and Schade Semiconducting elements Indium Phosphide Technological interest Walukiewicz Folberth and tfeiss Electrical properties Research Semiconductor physics Elemental semiconductors Germanium Silicon |
| Issue Date: | 1985 |
| Publisher: | IIT Kharagpur |
| Gov't Doc #: | NB11180 |
| URI: | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2696 |
| Appears in Collections: | LPE Growth and Characterisation of Heavily Doped N-InP |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NB11180_Introduction.pdf | 1.09 MB | Adobe PDF |  View/Open | |
| NB11180_Thesis.pdf Restricted Access | 7.97 MB | Adobe PDF | View/Open Request a copy |
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