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  4. A Study of Gamma Radiation Induced Changes in Thin Films of TeO2 and (TeO2)o.9 (In2O3)o.1 for Radiation Detector Applications
Please use this identifier to cite or link to this item: http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/14210
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dc.contributor.authorMaity, Tapan Kumar-
dc.date.accessioned2024-05-10T11:21:21Z-
dc.date.available2024-05-10T11:21:21Z-
dc.date.issued2011-01-
dc.identifier.govdocNB14434-
dc.identifier.urihttp://www.idr.iitkgp.ac.in/xmlui/handle/123456789/14210-
dc.language.isoenen_US
dc.publisherIIT Kharagpuren_US
dc.subjectMetal Oxidesen_US
dc.subjectThin Filmsen_US
dc.subjectGamma Radiation Dosimetersen_US
dc.subjectSensitivityen_US
dc.subjectOptical Band Gapen_US
dc.subjectMicrostructureen_US
dc.subjectComplex Impedanceen_US
dc.titleA Study of Gamma Radiation Induced Changes in Thin Films of TeO2 and (TeO2)o.9 (In2O3)o.1 for Radiation Detector Applicationsen_US
dc.typeThesisen_US
Appears in Collections:A Study of Gamma Radiation Induced Changes in Thin Films of TeO2 and (TeO2)o.9 (In2O3)o.1 for Radiation Detector Applications

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