dc.contributor.author | Chatterjee, Somenath | |
dc.date.accessioned | 2017-09-08T06:51:29Z | |
dc.date.available | 2017-09-08T06:51:29Z | |
dc.date.issued | 2003-09-01 | |
dc.identifier.govdoc | NB12996 | |
dc.identifier.govdoc | NB12995 | |
dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/8285 | |
dc.language.iso | en | en |
dc.publisher | IIT, Kharagpur | en |
dc.subject | High-k Materials | en |
dc.subject | MOS Capacitors | en |
dc.subject | Gate Dielectrics | en |
dc.subject | TOFSIMS Analysis | en |
dc.subject | XPS Analysis | en |
dc.title | Studies on High-k Gate Dielectric Films on Strained-SiGe Heterolayers | en |
dc.type | Thesis | en |