IDR - IIT Kharagpur

Compact Modeling of Si-Heterostructure Bipolar Transistors and Active Inductor Design for RF Applications

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dc.contributor.author Chakravorty, Anjan
dc.date.accessioned 2017-05-08T07:12:07Z
dc.date.available 2017-05-08T07:12:07Z
dc.date.issued 2004-12-01
dc.identifier.govdoc NB13266
dc.identifier.uri http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7562
dc.language.iso en en
dc.publisher IIT, Kharagpur en
dc.subject SiGe:C-HBTs en
dc.subject RF Applications en
dc.subject Active Inductor Design en
dc.subject Si-Heterostructure Bipolar Transistors en
dc.subject Si-Heterostructure en
dc.subject Compact Modeling en
dc.title Compact Modeling of Si-Heterostructure Bipolar Transistors and Active Inductor Design for RF Applications en
dc.type Thesis en


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