dc.contributor.author | Das, Subhashis | |
dc.date.accessioned | 2017-03-10T07:04:42Z | |
dc.date.available | 2017-03-10T07:04:42Z | |
dc.date.issued | 2016-11-01 | |
dc.identifier.govdoc | NB15645 | |
dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7444 | |
dc.language.iso | en | en |
dc.publisher | IIT, Kharagpur | en |
dc.subject | Crystalline Structure | en |
dc.subject | III-Nitrides | en |
dc.subject | X-ray Diffraction | en |
dc.subject | PAMBE | en |
dc.subject | AlGaN/GaN | en |
dc.title | Growth and Characterization of Epitaxial AlGaN/GaN and InGaN/GaN Heterostructures on Si (111) by PAMBE for Organic Vapor Sensing Applications | en |
dc.type | Thesis | en |