Epitaxial Growth Optimization of III-Arsenide and III-Nitride on Silicon: Influence of Buffer on MODFET for Low Cost Power Amplifier

dc.contributor.author	Mukhopadhyay, Partha
dc.date.accessioned	2017-03-08T10:18:00Z
dc.date.available	2017-03-08T10:18:00Z
dc.date.issued	2017-01-01
dc.identifier.govdoc	NB15668
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7396
dc.language.iso	en	en
dc.publisher	IIT, Kharagpur	en
dc.subject	Thermal Modelling	en
dc.subject	GaAs on Si(100)	en
dc.subject	InGaAs/AlGaAs HEMT	en
dc.subject	Epitaxial Growth	en
dc.subject	Epitaxial Growth	en
dc.subject	Molecular Beam Epitaxy	en
dc.subject	III-V Compound Semiconductor	en
dc.title	Epitaxial Growth Optimization of III-Arsenide and III-Nitride on Silicon: Influence of Buffer on MODFET for Low Cost Power Amplifier	en
dc.type	Thesis	en