dc.contributor.author | Chakraborty, Apurba | |
dc.date.accessioned | 2016-10-05T10:54:13Z | |
dc.date.available | 2016-10-05T10:54:13Z | |
dc.date.issued | 2016-08-01 | |
dc.identifier.govdoc | NB15592 | |
dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/7119 | |
dc.language.iso | en | en |
dc.publisher | IIT , Kharagpur | en |
dc.subject | Diode | en |
dc.subject | Reverse Leakage | en |
dc.subject | Electron Gas | en |
dc.subject | Heterostructure | en |
dc.subject | Semiconductor | en |
dc.title | Trapping Characteristics and Reverse Leakage Current Mechanism of Algan/Gan and Algan/Ingan/Gan Heterostructures | en |
dc.type | Thesis | en |