LPE Growth & Characterization of Inp & In1-Xgaxas Using Rareearth Gettering with Device Applications of In1-Xgaxas

dc.contributor.author	Kumar, Arvind
dc.date.accessioned	2015-12-31T06:25:02Z
dc.date.available	2015-12-31T06:25:02Z
dc.date.issued	1992
dc.identifier.govdoc	NB11640
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/6015
dc.language.iso	en	en
dc.publisher	IIT, Kharagpur	en
dc.subject	Surface Recombination Velocity	en
dc.subject	Photodetector	en
dc.subject	Gettering	en
dc.subject	Ingaas	en
dc.subject	Epitaxy	en
dc.title	LPE Growth & Characterization of Inp & In1-Xgaxas Using Rareearth Gettering with Device Applications of In1-Xgaxas	en
dc.type	Thesis	en