Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO

dc.contributor.author	Biswas, Pranab
dc.date.accessioned	2015-06-29T10:58:37Z
dc.date.available	2015-06-29T10:58:37Z
dc.date.issued	2015-06-29T10:58:37Z
dc.identifier.govdoc	NB15066
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/3958
dc.language.iso	en	en
dc.subject	DFT	en
dc.subject	Hopping	en
dc.subject	Charge Compensation	en
dc.subject	Thermal Diffusion	en
dc.title	Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO	en
dc.type	Thesis	en