LPE Growth and Characterisation Of Heavily Doped N-InP

dc.contributor.author	BENDAPUDI, SEISHU
dc.date.accessioned	2014-09-18T05:34:43Z
dc.date.available	2014-09-18T05:34:43Z
dc.date.issued	1985
dc.identifier.govdoc	NB11180
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2696
dc.language.iso	en	en
dc.publisher	IIT Kharagpur	en
dc.subject	Welker	en
dc.subject	Optical absorption	en
dc.subject	Oswald and Schade	en
dc.subject	Semiconducting elements	en
dc.subject	Indium Phosphide	en
dc.subject	Technological interest	en
dc.subject	Walukiewicz	en
dc.subject	Folberth and tfeiss	en
dc.subject	Electrical properties	en
dc.subject	Research	en
dc.subject	Semiconductor physics	en
dc.subject	Elemental semiconductors Germanium	en
dc.subject	Silicon	en
dc.title	LPE Growth and Characterisation Of Heavily Doped N-InP	en
dc.type	Thesis	en