dc.contributor.author | Mukherjee, Chhandak | |
dc.date.accessioned | 2014-08-22T11:13:43Z | |
dc.date.available | 2014-08-22T11:13:43Z | |
dc.date.issued | 2013-03 | |
dc.identifier.govdoc | NB14844 | |
dc.identifier.uri | http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/2229 | |
dc.language.iso | en | en |
dc.publisher | IIT Kharagpur | en |
dc.subject | Valence Band | en |
dc.subject | Strain-induced Mobility | en |
dc.subject | Tri-gate | en |
dc.subject | Substrate-induced | en |
dc.subject | Piezoresistive | en |
dc.subject | Power spectrum | en |
dc.subject | Probability distribution | en |
dc.subject | Carrier Mobility | en |
dc.subject | Gate Voltage | en |
dc.subject | Scaling | en |
dc.subject | Electronic Circuits | en |
dc.subject | Reliability | en |
dc.subject | Stress-Strain | en |
dc.subject | Silicon | en |
dc.subject | Conduction | en |
dc.title | Low Frequency Noise Characterization and Modeling of Strain-Engineered Mosfets | en |
dc.type | Thesis | en |