Design Optimization and Analytical Modeling of Gallium Oxide-based Heterostructure Field Effect Transistors (HFETs)

dc.contributor.author	Meshram, Ashvinee Deo
dc.date.accessioned	2026-03-02T10:16:57Z
dc.date.available	2026-03-02T10:16:57Z
dc.date.issued	2026-01
dc.identifier.govdoc	NB19080
dc.identifier.uri	http://127.0.0.1/xmlui/handle/123456789/17021
dc.language.iso	en	en_US
dc.publisher	IIT Kharagpur	en_US
dc.subject	Analytical Model	en_US
dc.subject	Breakdown Voltage	en_US
dc.subject	Channel Charge	en_US
dc.subject	Drain Current	en_US
dc.subject	Heterostructure Field-Effect Transistors	en_US
dc.title	Design Optimization and Analytical Modeling of Gallium Oxide-based Heterostructure Field Effect Transistors (HFETs)	en_US
dc.type	Thesis	en_US