| dc.contributor.author | Sengupta, Anumita | |
| dc.date.accessioned | 2025-12-17T11:41:33Z | |
| dc.date.available | 2025-12-17T11:41:33Z | |
| dc.date.issued | 2025-11 | |
| dc.identifier.govdoc | NB18979 | |
| dc.identifier.uri | http://127.0.0.1/xmlui/handle/123456789/16689 | |
| dc.language.iso | en | en_US |
| dc.publisher | IIT Kharagpur | en_US |
| dc.subject | Analytical Model | en_US |
| dc.subject | Beta-Gallium Oxide | en_US |
| dc.subject | Breakdown Voltage | en_US |
| dc.subject | Charge Density | en_US |
| dc.subject | Dual-Gate Field Effect Transistor | en_US |
| dc.title | Simulation and Analytical Modeling of Gallium Oxide Nanomembrane Field Effect Transistors | en_US |
| dc.type | Thesis | en_US |