dc.contributor.author | Ahmed, Nadim | |
dc.date.accessioned | 2025-07-14T06:57:39Z | |
dc.date.available | 2025-07-14T06:57:39Z | |
dc.date.issued | 2025-05 | |
dc.identifier.govdoc | NB18715 | |
dc.identifier.uri | http://127.0.0.1/xmlui/handle/123456789/16150 | |
dc.language.iso | en | en_US |
dc.publisher | IIT Kharagpur | en_US |
dc.subject | 2DEG Density | en_US |
dc.subject | Analytical Model | en_US |
dc.subject | Drain Current | en_US |
dc.subject | Gate Capacitance | en_US |
dc.subject | Methods of Extraction | en_US |
dc.title | Analytical Modeling of Normally-OFF p-GaN/AlGaN/GaN HEMTs | en_US |
dc.type | Thesis | en_US |