Resistive Switching in Non-Stoichiometric Amorphous Tungsten Oxide-Based Memristors

dc.contributor.author	Rudrapal, Krishna
dc.date.accessioned	2025-03-04T10:13:19Z
dc.date.available	2025-03-04T10:13:19Z
dc.date.issued	2024-12
dc.identifier.govdoc	NB18539
dc.identifier.uri	http://www.idr.iitkgp.ac.in/xmlui/handle/123456789/15786
dc.language.iso	en	en_US
dc.publisher	IIT Kharagpur	en_US
dc.subject	Resistive RAM	en_US
dc.subject	Tungsten Oxide Memristor	en_US
dc.subject	Oxygen Vacancy Modulation	en_US
dc.subject	Self-Compliance Forming-Free Switching	en_US
dc.subject	Multi-State Memory	en_US
dc.title	Resistive Switching in Non-Stoichiometric Amorphous Tungsten Oxide-Based Memristors	en_US
dc.type	Thesis	en_US