<?xml version="1.0" encoding="UTF-8"?><rss xmlns:dc="http://purl.org/dc/elements/1.1/" version="2.0">
<channel>
<title>Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO</title>
<link>http://127.0.0.1/xmlui/handle/123456789/3957</link>
<description/>
<pubDate>Fri, 17 Apr 2026 02:31:23 GMT</pubDate>
<dc:date>2026-04-17T02:31:23Z</dc:date>
<item>
<title>Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO</title>
<link>http://127.0.0.1/xmlui/handle/123456789/3958</link>
<description>Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO
Biswas, Pranab
</description>
<pubDate>Mon, 29 Jun 2015 10:58:37 GMT</pubDate>
<guid isPermaLink="false">http://127.0.0.1/xmlui/handle/123456789/3958</guid>
<dc:date>2015-06-29T10:58:37Z</dc:date>
</item>
</channel>
</rss>
