<?xml version="1.0" encoding="UTF-8"?><feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
<title>Surface Passivation and Gate-Dielectric Formation on Compound and Alloy Semiconductors</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/9323" rel="alternate"/>
<subtitle/>
<id>http://127.0.0.1/xmlui/handle/123456789/9323</id>
<updated>2026-04-17T11:58:22Z</updated>
<dc:date>2026-04-17T11:58:22Z</dc:date>
<entry>
<title>Surface Passivation and Gate-Dielectric Formation on Compound and Alloy Semiconductors</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/9324" rel="alternate"/>
<author>
<name>Pal, Suparna</name>
</author>
<id>http://127.0.0.1/xmlui/handle/123456789/9324</id>
<updated>2024-04-24T10:42:27Z</updated>
<published>2003-07-25T00:00:00Z</published>
<summary type="text">Surface Passivation and Gate-Dielectric Formation on Compound and Alloy Semiconductors
Pal, Suparna
</summary>
<dc:date>2003-07-25T00:00:00Z</dc:date>
</entry>
</feed>
