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<title>Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/3957" rel="alternate"/>
<subtitle/>
<id>http://127.0.0.1/xmlui/handle/123456789/3957</id>
<updated>2026-04-17T13:44:25Z</updated>
<dc:date>2026-04-17T13:44:25Z</dc:date>
<entry>
<title>Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO</title>
<link href="http://127.0.0.1/xmlui/handle/123456789/3958" rel="alternate"/>
<author>
<name>Biswas, Pranab</name>
</author>
<id>http://127.0.0.1/xmlui/handle/123456789/3958</id>
<updated>2015-06-29T10:58:37Z</updated>
<published>2015-06-29T10:58:37Z</published>
<summary type="text">Role of Thermally Diffused Arsenic from Semi-Insulating GaAs Substrate in Achieving p-TYPE Conductivity in MOCVD Grown ZnO
Biswas, Pranab
</summary>
<dc:date>2015-06-29T10:58:37Z</dc:date>
</entry>
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